Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs
A simulation methodology for ultra-scaled InAs quantum well field-effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where strain is computed in an atomistic valence-force-field method, a...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2014-04-11T13:22:46Z.
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| Subjects: | |
| Online Access: | Get fulltext |