Preferential Scattering by Interfacial Charged Defects for Enhanced Thermoelectric Performance in Few-layered n-type Bi[subscript 2]Te[subscript 3]

Preferential Scattering by Interfacial Charged Defects for Enhanced Thermoelectric Performance in Few-layered n-type Bi[subscript 2]Te[subscript 3]

Over the past two decades several nano-structuring methods have helped improve the figure of merit (ZT) in the state-of-the art bulk thermoelectric materials. While these methods could enhance the thermoelectric performance of p-type Bi[subscript 2]Te[subscript 3], it was frustrating to researchers...

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Main Authors: Puneet, Pooja (Author), Podila, Ramakrishna (Author), Karakaya, Mehmet (Author), Zhu, Song (Author), He, Jian (Author), Tritt, Terry M. (Author), Rao, Apparao M. (Author), Dresselhaus, Mildred (Contributor)
Other Authors: delete (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: Nature Publishing Group, 2014-03-24T19:53:46Z.
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