|
|
|
|
| LEADER |
01514 am a22002773u 4500 |
| 001 |
82881 |
| 042 |
|
|
|a dc
|
| 100 |
1 |
0 |
|a Mendoza, Hiroshi A.
|e author
|
| 100 |
1 |
0 |
|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
|e contributor
|
| 100 |
1 |
0 |
|a Bahlke, Matthias Erhard
|e contributor
|
| 100 |
1 |
0 |
|a Mendoza, Hiroshi A.
|e contributor
|
| 100 |
1 |
0 |
|a Yin, Allen S.
|e contributor
|
| 100 |
1 |
0 |
|a Baldo, Marc A.
|e contributor
|
| 700 |
1 |
0 |
|a Ashall, Daniel T.
|e author
|
| 700 |
1 |
0 |
|a Yin, Allen S.
|e author
|
| 700 |
1 |
0 |
|a Baldo, Marc A.
|e author
|
| 700 |
1 |
0 |
|a Bahlke, Matthias Erhard
|e author
|
| 245 |
0 |
0 |
|a Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
|
| 260 |
|
|
|b Wiley Blackwell,
|c 2013-12-09T14:17:24Z.
|
| 856 |
|
|
|z Get fulltext
|u http://hdl.handle.net/1721.1/82881
|
| 520 |
|
|
|a To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO[subscript 2] is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown.
|
| 520 |
|
|
|a United States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-SC0001088)
|
| 520 |
|
|
|a MIT Energy Initiative (Graduate Fellowship in Energy)
|
| 546 |
|
|
|a en_US
|
| 655 |
7 |
|
|a Article
|
| 773 |
|
|
|t Advanced Materials
|
