Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work...

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Bibliographic Details
Main Authors: Heo, Jaeyeong (Author), Siah, Sin Cheng (Contributor), Kim, Sang Bok (Author), Gordon, Roy G. (Author), Mailoa, Jonathan P (Author), Brandt, Riley E (Author), Buonassisi, Anthony (Author), Lee, Yun Seog (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor), Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity (Contributor), Lee, Yun seog (Contributor), Mailoa, Jonathan P. (Contributor), Brandt, Riley E. (Contributor), Buonassisi, Tonio (Contributor)
Format: Article
Language:English
Published: Royal Society of Chemistry, 2013-11-15T15:52:10Z.
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