Ge-on-Si laser operating at room temperature

Ge-on-Si laser operating at room temperature

Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature phot...

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Bibliographic Details
Main Authors: Liu, Jifeng (Contributor), Sun, Xiaochen (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor), Camacho-Aguilera, Rodolfo Ernesto (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: Optical Society of America, 2013-07-26T16:19:49Z.
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