Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon
In multicrystalline silicon (mc-Si), the presence of dislocation-rich areas limits solar cell conversion efficiencies. Previous studies have demonstrated that dislocation densities higher than 106 cm-2 can dramatically decrease the minority carrier lifetime. High dislocation densities, and their dec...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2013-04-03T21:02:15Z.
|
| Subjects: | |
| Online Access: | Get fulltext |