Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction

Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction

n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resoluti...

Full description

Bibliographic Details
Main Authors: Gao, Feng (Contributor), Lo, Hsin-Yi (Contributor), Ram, Rajeev J. (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2012-09-12T19:40:20Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items