Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications
We have experimentally studied the scaling behavior of sub-100-nm InAs high-electron mobility transistors (HEMTs) on InP substrate from the logic operation point of view. These devices have been designed for scalability and combine a thin InAlAs barrier and a thin channel containing a pure InAs subc...
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-07-17T12:36:41Z.
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| Subjects: | |
| Online Access: | Get fulltext |