Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity with bias consists of a decrease in maximum drain current (Imax) caused by a c...

Full description

Bibliographic Details
Main Authors: Hisaka, Takayuki (Author), Sasaki, Hajime (Author), Nogami, Yoichi (Author), Hosogi, Kenji (Author), Yoshida, Naohito (Author), Villanueva, Anita A. (Contributor), del Alamo, Jesus A. (Contributor), Hasegawa, Shigehiko (Author), Asahi, Hajime (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Elsevier, 2012-07-11T15:48:51Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items