Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth

Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth

We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a...

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Bibliographic Details
Main Authors: Srisungsitthisunti, Pornsak (Author), Tansarawiput, Chookiat (Author), Zhang, Huaichen (Author), Qi, Minghao (Author), Xu, Xianfan (Author), Moon, Euclid Eberle (Contributor)
Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: SPIE, 2011-02-15T13:41:47Z.
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