30 nm In[subscript 0.7]Ga[subscript 0.3]As inverted-type HEMTs with reduced gate leakage current for logic applications
We have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability and high frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent Lg sca...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-10-21T20:02:28Z.
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| Subjects: | |
| Online Access: | Get fulltext |