Lack of spatial correlation in mosfet threshold voltage variation and implications for voltage scaling
Due to increased variation in modern process technology nodes, the spatial correlation of variation is a key issue for both modeling and design. We have created a large array test-structure to analyze the magnitude of spatial correlation of threshold voltage (VT) in a 180 nm CMOS process. The data f...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-03-08T17:28:47Z.
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| Subjects: | |
| Online Access: | Get fulltext |