Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability...

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Bibliographic Details
Main Authors: Piner, Edwin L. (Contributor), Jae-kyu, Lee (Contributor), Chung, Jinwook (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-03-08T16:42:45Z.
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