Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

<jats:title>Abstract</jats:title> <jats:p>We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal Al-polar AlN layers grown on sapphire substrates. By annealing at 1600 °C, s...

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Main Authors: Okumura, Hironori (Author), Watanabe, Yasuhiro (Author), Shibata, Tomohiko (Author), Yoshizawa, Kohei (Author), Uedono, Akira (Author), Tokunaga, Hiroki (Author), Koseki, Shuuichi (Author), Arimura, Tadanobu (Author), Suihkonen, Sami (Author), Palacios, Tomás (Author)
Format: Article
Language:English
Published: IOP Publishing, 2022-07-18T18:00:00Z.
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