Making BaZrS 3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an a...

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Bibliographic Details
Main Authors: Sadeghi, Ida (Author), Ye, Kevin (Author), Xu, Michael (Author), Li, Yifei (Author), LeBeau, James M. (Author), Jaramillo, Rafael (Author)
Format: Article
Language:English
Published: Wiley, 2022-01-31T18:41:57Z.
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