Excess Off-State Current in InGaAs FinFETs
We present a detailed study of the off-state leakage current in scaled self-aligned InGaAs FinFETs. In long-channel devices, band-to-band tunneling at the drain-end of the channel is shown to be the root cause of excessive off-state current. This conclusion emerges from its characteristic electric f...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2021-10-13T14:51:24Z.
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| Subjects: | |
| Online Access: | Get fulltext |