Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices

• Main Authors: Rollo, T. (Author), Daniel, Luca (Contributor), Esseni, D. (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE), 2021-06-15T20:02:16Z.
• Subjects: Article
• Online Access: Get fulltext

 In recent years electron devices based on ferroelectric materials have attracted a lot of interest well beyond FeRAM memories. Negative capacitance transistors (NC-FETs) have been investigated as steep slope transistors [1], [2], and Ferroelectric FETs (Fe-FETs) are under intense scrutiny also as synaptic devices for neuromorphc computing, where the minor loops in ferroelectrics can allow to achieve multiple values of conductance in read mode [3], [4], [5]. Furthermore, the persistence of ferroelectricity in ultra-thin ferroelectric layers paved the way to ferroelectric tunnelling junctions [6], where a polarization dependent tunneling current can be exploited to realize high impedance memristors, amenable for ultra power-efficient and thus massive parallel computation.