Carrier localization in perovskite nickelates from oxygen vacancies

Carrier localization in perovskite nickelates from oxygen vacancies

Point defects, such as oxygen vacancies, control the physical properties of complex oxides, relevant in active areas of research from superconductivity to resistive memory to catalysis. In most oxide semiconductors, electrons that are associated with oxygen vacancies occupy the conduction band, lead...

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Main Authors: Kotiuga, Michele (Author), Zhang, Zhen (Author), Li, Jiarui (Author), Rodolakis, Fanny (Author), Zhou, Hua (Author), Sutarto, Ronny (Author), He, Feizhou (Author), Wang, Qi (Author), Sun, Yifei (Author), Wang, Ying (Author), Aghamiri, Neda Alsadat (Author), Hancock, Steven Bennett (Author), Rokhinson, Leonid P (Author), Landau, David P (Author), Abate, Yohannes (Author), Freeland, John W (Author), Comin, Riccardo (Author), Ramanathan, Shriram (Author), Rabe, Karin M (Author)
Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: National Academy of Sciences, 2020-10-05T21:42:26Z.
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