Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation

Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation

We demonstrate self-aligned InGaAs FinFETs with fin widths down to 5 nm fabricated through a CMOS compatible front-end process. Precision dry etching of the recess cap results in metal contacts that are about 5 nm away from the intrinsic portion of the fin. The new process has allowed us to fabricat...

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Bibliographic Details
Main Authors: Vardi, Alon (Author), Kong, Lisa (Lisa Fanzhen) (Author), Lu, Wenjie (Author), Cai, Xiaowei (Author), Zhao, Xin (Author), Grajal de la Fuente, Jesus (Author), del Alamo, Jesus A (Author)
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2020-07-15T14:24:58Z.
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Summary:We demonstrate self-aligned InGaAs FinFETs with fin widths down to 5 nm fabricated through a CMOS compatible front-end process. Precision dry etching of the recess cap results in metal contacts that are about 5 nm away from the intrinsic portion of the fin. The new process has allowed us to fabricate devices with undoped fins and compare them with delta-doped fins. We find that in highly scaled transistors, undoped fin devices show better OFF-state and a tighter VT distribution but similar ON-state characteristics, as compared with δ-doped-fin transistors. 2D Poisson-Schrodinger simulations reveal undoped fins making more effective use of the fin height.

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