Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation
We demonstrate self-aligned InGaAs FinFETs with fin widths down to 5 nm fabricated through a CMOS compatible front-end process. Precision dry etching of the recess cap results in metal contacts that are about 5 nm away from the intrinsic portion of the fin. The new process has allowed us to fabricat...
| Main Authors: | , , , , , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2020-07-15T14:24:58Z.
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| Subjects: | |
| Online Access: | Get fulltext |