Sub-Thermal Subthreshold Characteristics in Top-Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs
This letter demonstrates top-down InGaAs/InAs heterojunction vertical nanowire tunnel FETs with sub-thermal subthreshold characteristics over two orders of magnitude of current. A minimal subthreshold swing of 53 mV/decade at V[subscript ds] = 0.3 V has been obtained at room temperature. An I[subscr...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2020-07-14T02:21:48Z.
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| Subjects: | |
| Online Access: | Get fulltext |