Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies

Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies

Gallium nitride (GaN) transistors are desirable for use in power electronics because of their low resistance and capacitance as compared to silicon devices. However, when switched at high frequencies, GaN transistors experience high dynamic on resistance which is both detrimental and difficult to me...

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Bibliographic Details
Main Authors:	Galapon, Bryson (Author), Hanson, Alex J. (Author), Perreault, David J. (Author)
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format:	Article
Language:	English
Published:	Institute of Electrical and Electronics Engineers (IEEE), 2020-05-06T19:13:07Z.
Subjects:	Article
Online Access:	Get fulltext

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