Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies
Gallium nitride (GaN) transistors are desirable for use in power electronics because of their low resistance and capacitance as compared to silicon devices. However, when switched at high frequencies, GaN transistors experience high dynamic on resistance which is both detrimental and difficult to me...
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2020-05-06T19:13:07Z.
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| Subjects: | |
| Online Access: | Get fulltext |