Materials and processing issues in vertical GaN power electronics

Materials and processing issues in vertical GaN power electronics

Silicon-based power devices are reaching their fundamental performance limit. The use of wide-bandgap semiconductors with superior material properties over silicon offers the potential for power electronic systems with much higher power densities and higher conversion efficiency. GaN, with a high cr...

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Bibliographic Details
Main Authors: Hu, Jie (Author), Zhang, Yuhao (Author), Sun, Min (Author), Piedra, Daniel (Author), Chowdhury, Nadim (Author), Palacios, Tomas (Author)
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Elsevier BV, 2019-07-16T16:44:23Z.
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