N-polar AlN buffer growth by MOVPE for transistor applications

N-polar AlN buffer growth by MOVPE for transistor applications

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature...

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Bibliographic Details
Main Authors: Lemettinen, Jori (Author), Okumura, Hironori (Author), Palacios, Tomas (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Japan Society of Applied Physics, 2019-07-10T18:53:18Z.
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