Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogene...

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Main Authors: Lin, Yuxuan (Author), Ma, Qiong (Author), Shen, Pin-Chun (Author), Ilyas, Batyr (Author), Bie, Yaqing (Author), Liao, Albert D. (Author), Ergecen, Emre (Author), Han, Bingnan (Author), Mao, Nannan (Author), Zhang, Xu (Author), Ji, Xiang (Author), Zhang, Yuhao (Author), Yin, Jihao (Author), Huang, Shengxi (Author), Dresselhaus, Mildred (Author), Gedik, Nuh (Author), Jarillo-Herrero, Pablo (Author), Ling, Xi (Author), Kong, Jing (Author), Palacios, Tomas (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: American Association for the Advancement of Science (AAAS), 2019-06-28T15:44:26Z.
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