A multi-state memory device based on the unidirectional spin Hall magnetoresistance

A multi-state memory device based on the unidirectional spin Hall magnetoresistance

We report on a memory device concept based on the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in a single ferromagnetic heterostructure. We show that the USMR with possible contribution of Joule heating-driven magnetothermal eff...

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Bibliographic Details
Main Authors: Gambardella, Pietro (Author), Avci, Can Onur (Contributor), Mann, Maxwell (Contributor), Tan, Aik Jun (Contributor), Beach, Geoffrey Stephen (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: AIP Publishing, 2018-06-15T17:07:45Z.
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