Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam
Vacancy-type defects near interfaces between metal contacts and GaN grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for Ti-deposited GaN showed that optic...
| Main Authors: | , , , , , , , , |
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| Other Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2018-03-21T15:37:04Z.
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| Subjects: | |
| Online Access: | Get fulltext |