Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

Vacancy-type defects near interfaces between metal contacts and GaN grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for Ti-deposited GaN showed that optic...

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Bibliographic Details
Main Authors: Uedono, Akira (Author), Fujishima, Tatsuya (Contributor), Piedra, Daniel (Contributor), Yoshihara, Nakaaki (Author), Ishibashi, Shoji (Author), Sumiya, Masatomo (Author), Laboutin, Oleg (Author), Johnson, Wayne (Author), Palacios, Tomás (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Palacios, Tomas (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2018-03-21T15:37:04Z.
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