GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD
Heterojunction bipolar transistors with GaAs[subscript x]P[subscript 1−x] bases and collectors and In[subscript y]Ga[subscript 1−y]P emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. Four different Ga...
| Main Authors: | , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2017-12-05T16:34:35Z.
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| Subjects: | |
| Online Access: | Get fulltext |