High-speed modulator with interleaved junctions in zero-change CMOS photonics

High-speed modulator with interleaved junctions in zero-change CMOS photonics

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a lin...

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Bibliographic Details
Main Authors: Alloatti, Luca (Contributor), Cheian, Dinis (Contributor), Ram, Rajeev J (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2017-09-22T15:08:55Z.
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Summary:A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.
United States. Defense Advanced Research Projects Agency (Award HR0011-11-C-0100)
United States. Defense Advanced Research Projects Agency (Contract HR0011-11-9-0009)

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