High-speed modulator with interleaved junctions in zero-change CMOS photonics
A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a lin...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2017-09-22T15:08:55Z.
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| Subjects: | |
| Online Access: | Get fulltext |