Room temperature negative differential resistance in terahertz quantum cascade laser structures
The mechanisms that limit the temperature performance of GaAs/Al[subscript 0.15]GaAs-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated LO-phonon scattering and leakage of charge carriers into the continuum. Consequently, the combination of highly diagonal...
Main Authors: | Albo, Asaf (Contributor), Hu, Qing (Contributor), Reno, John L. (Author) |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Institute of Physics (AIP),
2017-08-17T17:50:16Z.
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Subjects: | |
Online Access: | Get fulltext |
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