Room temperature negative differential resistance in terahertz quantum cascade laser structures

The mechanisms that limit the temperature performance of GaAs/Al[subscript 0.15]GaAs-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated LO-phonon scattering and leakage of charge carriers into the continuum. Consequently, the combination of highly diagonal...

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Bibliographic Details
Main Authors: Albo, Asaf (Contributor), Hu, Qing (Contributor), Reno, John L. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2017-08-17T17:50:16Z.
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