Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing next generation high-power RF amplifiers and high-efficiency power converters. However, elevated channel temperatures due to self-heating often severely limit their power handling capability. Although...
| Main Authors: | , , , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2017-07-21T16:00:14Z.
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| Subjects: | |
| Online Access: | Get fulltext |