Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

• Main Authors: Nourbakhsh, Amirhasan (Contributor), Zubair, Ahmad (Contributor), Tavakkoli Kermani Ghariehali, Amir (Contributor), Sajjad, Redwan Noor (Contributor), Ling, Xi (Contributor), Dresselhaus, Mildred (Contributor), Kong, Jing (Contributor), Berggren, Karl K (Contributor), Antoniadis, Dimitri A (Contributor), Palacios, Tomas (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Plasma Science and Fusion Center (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE), 2017-07-18T14:16:50Z.
• Subjects: Article
• Online Access: Get fulltext

 We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS[subscript 2] in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS[subscript 2] regions with half-pitch of 7.5 nm. The MoS[subscript 2] composite transistor possesses an off-state current of 100 pA/μm and an I[subscript on]/I[subscript off] ratio in excess of 10[subscript 5]. Modeling of the resulting current-voltage characteristics reveals that the 2H/1T' MoS[subscript 2] homojunction has a resistance of 75 Ω.μm while the 2H-MoS[subscript 2] exhibits low-field mobility of ~8 cm[superscript 2]/V.s and carrier injection velocity of ~10[superscript 6] cm/s.