Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS[subscript 2] in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS[subscript 2] regions with half-pitch of 7.5 nm. The MoS[subscript 2] composite transistor p...

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Main Authors: Nourbakhsh, Amirhasan (Contributor), Zubair, Ahmad (Contributor), Tavakkoli Kermani Ghariehali, Amir (Contributor), Sajjad, Redwan Noor (Contributor), Ling, Xi (Contributor), Dresselhaus, Mildred (Contributor), Kong, Jing (Contributor), Berggren, Karl K (Contributor), Antoniadis, Dimitri A (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Plasma Science and Fusion Center (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2017-07-18T14:16:50Z.
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