Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy
Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the G...
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2017-06-29T17:02:32Z.
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| Subjects: | |
| Online Access: | Get fulltext |