The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate
We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p(AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 °C with...
| Main Authors: | , , , , , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier,
2017-06-20T13:30:34Z.
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| Subjects: | |
| Online Access: | Get fulltext |