The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate

The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate

We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p(AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 °C with...

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Bibliographic Details
Main Authors: Kohen, David (Author), Bao, Shuyu (Author), Lee, Kwang Hong (Author), Lee, Kenneth Eng Kian (Contributor), Tan, Chuan Seng (Contributor), Yoon, Soon Fatt (Contributor), Fitzgerald, Eugene A (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Elsevier, 2017-06-20T13:30:34Z.
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