Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in th...
| Main Authors: | , , , , , , , , , , , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2017-04-20T17:11:32Z.
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| Subjects: | |
| Online Access: | Get fulltext |