Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in th...

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Bibliographic Details
Main Authors: Hiu-Yung Wong (Author), Hatem, Christopher (Author), Lili Yu, Daniel (Author), de Braga, Nelson Almeida (Author), Mickevicius, Rimvydas Vidas (Author), Zhang, Yuhao (Contributor), Sun, Min (Contributor), Lin, Yuxuan (Contributor), Srivastava, Puneet (Contributor), Azize, Mohamed (Contributor), Piedra, Daniel (Contributor), Sumitomo, Takamichi (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2017-04-20T17:11:32Z.
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