Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs

Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs

We have investigated the impact of high-power (HP) stress on the dynamic ON-resistance (RON) in high-voltage GaN High-Electron-Mobility Transistors (HEMTs). We use a newly proposed dynamic RON measurement methodology which allows us to observe RON transients after an OFF-to-ON switching event from 2...

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Bibliographic Details
Main Authors: Jin, Donghyun (Contributor), del Alamo, Jesus A (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), del Alamo, Jesus (Contributor)
Format: Article
Language:English
Published: Elsevier, 2017-04-13T17:40:08Z.
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