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01687 am a22002053u 4500 |
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106657 |
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|a Vangala, S. R.
|e author
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|a Lincoln Laboratory
|e contributor
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|a Grzesik, Michael J.
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|a Goodhue, William D.
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|a Grzesik, Michael J.
|e author
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|a Goodhue, William D.
|e author
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|a Indirect Wafer Bonding and Epitaxial Transfer of GaSb-Based Materials
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|b Springer US,
|c 2017-01-27T18:00:02Z.
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| 856 |
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|z Get fulltext
|u http://hdl.handle.net/1721.1/106657
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|a Results from a study of indirect wafer bonding and epitaxial transfer of GaSb-based materials are presented. Benzocyclobutene (BCB) was used as a bonding agent to bond GaSb and epitaxial structures lattice matched to GaSb onto Si, GaAs, and sapphire carrier substrates. To better understand sources of stress during the bonding process, which can result in cracking and subsurface damage of the GaSb-based materials, BCB's hardness and reduced elastic modulus were measured at various stages during the curing process. Based on the results of curing experiments, a bonding and epitaxial transfer process for GaSb-based materials was then developed. Following bonding, using an experimentally determined low-stress cure cycle, GaSb substrates were removed from epitaxial layers of InAsSb using a combination of mechanical thinning and polishing followed by selective chemical etching using a hydrofluoric and chromic acid solution. Etch selectivity data are also presented where selectivity greater than 100:1 is achieved for GaSb:InAsSb.
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|a Article
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|t Journal of Electronic Materials
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