Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p[superscript ±]-InAs/InAsSb cap structure. The incorporation of a p[superscript ±]-InAsSb layer enables the use of a thicker cap with lower sheet resi...

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Bibliographic Details
Main Authors: Guo, Luke W. (Contributor), Bennett, Brian R. (Author), Boos, John Brad (Author), Del Alamo, Jesus A. (Author), Lu, Wenjie (Contributor), del Alamo, Jesus A. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2016-04-28T16:25:31Z.
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