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101002 |
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|a Alloatti, Luca
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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|a Massachusetts Institute of Technology. Research Laboratory of Electronics
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|a Alloatti, Luca
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|a Srinivasan, Srinivasan A.
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|a Orcutt, Jason Scott
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|a Ram, Rajeev J.
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|a Srinivasan, Srinivasan A.
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|a Orcutt, Jason Scott
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|a Ram, Rajeev J.
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|a Waveguide-coupled detector in zero-change complementary metal-oxide-semiconductor
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|c 2016-01-27T17:09:21Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/101002
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|a We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at −1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB.
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|a United States. Defense Advanced Research Projects Agency. Photonically Optimized Embedded Microprocessors Program (Award HR0011-11-C-0100)
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|a United States. Defense Advanced Research Projects Agency. Photonically Optimized Embedded Microprocessors Program (Contract HR0011-11-9-0009)
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|a en_US
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|a Article
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|t Applied Physics Letters
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