Waveguide-coupled detector in zero-change complementary metal-oxide-semiconductor

We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidt...

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Bibliographic Details
Main Authors: Alloatti, Luca (Contributor), Srinivasan, Srinivasan A. (Contributor), Orcutt, Jason Scott (Contributor), Ram, Rajeev J. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: 2016-01-27T17:09:21Z.
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