Top-down fabrication process of ZnO NWFETs
ZnO NWFETs were fabricated with and without Al2O3 passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018 cm-3 for the thin film, contact resistance values were lowered (passivated device had Rcon = 2.5 x 104 Ω; unp...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications Ltd,
2019.
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| Subjects: | |
| Online Access: | Get fulltext |