Optimization of n-channel silicon nanowire field effect transistor using Taguchi method
In the last few decades, the performance of electronics devices, especially the transistors have made tremendous progress thanks to the novel metal-oxidesemiconductor field-effect-transistor (MOSFET) devices structure like Silicon Nanowire FET (SNWFET). As the device is scaled down into nanometer re...
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| Format: | Thesis |
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2018-01.
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| Online Access: | Get fulltext |