Electrochemically deposited germanium on silicon and its crystallization by rapid melting growth
It is well known that continuous miniaturization of transistors tends to create several problems such as current leakage, short channel effect, etc. Therefore, introduction of new channel material with higher carrier mobilities such as Germanium (Ge) is suggested to overcome this physical limitation...
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| Format: | Thesis |
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2014-06.
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| Online Access: | Get fulltext |